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PDF IRF322 Data sheet ( Hoja de datos )
| Número de pieza | IRF322 | |
| Descripción | N-Channel Power MOSFETs | |
| Fabricantes | Harris | |
| Logotipo |  |
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Semiconductor
July 1998
IRF320, IRF321,
IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs
Features
• 2.8A and 3.3A, 350V and 400V
• rDS(ON) = 1.8Ω and 2.5Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF320
TO-204AA
IRF320
IRF321
TO-204AA
IRF321
IRF322
TO-204AA
IRF322
IRF323
TO-204AA
IRF323
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17404.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1569.3
1 page  
IRF320, IRF321, IRF322, IRF323
Typical Performance Curves Unless Otherwise Specified (Continued)
5
80µs PULSE TEST
4
10V
6.0V
3
5.5V
2
VGS = 5.0V
1
4.5V
4.0V
0
0 3 6 9 12 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
VDS ≥ 50V
80µs PULSE TEST
DUTY CYCLE ≤ 2%
1
150oC
25oC
0.1
0.01
0
24
68
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
10.0
8.0
3.0
ID = 3.3A
VGS = 10V
2.4
6.0 1.8
4.0 VGS = 10V
1.2
VGS = 20V
2.0 0.6
0
0 3 6 9 12 15
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
600
400 CISS
200
0
1
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF322.PDF ] | |
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