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PDF IRF823 Data sheet ( Hoja de datos )
| Número de pieza | IRF823 | |
| Descripción | N-Channel Power MOSFETs | |
| Fabricantes | Harris | |
| Logotipo |  |
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SEMICONDUCTOR
November 1997
IRF820, IRF821,
IRF822, IRF823
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
Features
• 2.2A and 2.5A, 450V and 500V
• rDS(ON) = 3.0Ω and 4.0Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF820
TO-220AB
IRF820
IRF821
TO-220AB
IRF821
IRF822
TO-220AB
IRF822
IRF823
TO-220AB
IRF823
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17405.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1581.2
1 page  
IRF820, IRF821, IRF822, IRF823
Typical Performance Curves Unless Otherwise Specified (Continued)
5
80µs PULSE TEST
4
3
2
VGS = 10V
VGS = 6.0V
VGS = 5.5V
1 VGS = 5.0V
VGS = 4.0V
VGS = 4.5V
0
0 4 8 12 16 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
80µs PULSE TEST
VDS ≥ 50V
1
TJ = 150oC
TJ = 25oC
0.1
10-2
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
10
80µs PULSE TEST
8
6
4
VGS = 10V
VGS = 20V
3.0
VGS = 10V, ID = 2.5A
2.4
1.8
1.2
2 0.6
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
600
400
200
0
1
CISS
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF823.PDF ] | |
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