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PDF C5239 Data sheet ( Hoja de datos )
| Número de pieza | C5239 | |
| Descripción | NPN Transistor - 2SC5239 | |
| Fabricantes | Sanken electric | |
| Logotipo |  |
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2SC5239
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5239
900
550
7
3(Pulse6)
1.5
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
Conditions
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.25A
VCB=10V, f=1MHz
(Ta=25°C)
2SC5239 Unit
100max
100max
µA
µA
550min
V
10 to 30
0.5max
V
1.2max
V
6typ MHz
35typ
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
250 250
1
10 –5 0.15
IB2
(A)
–0.45
ton
(µs)
0.7max
tstg
(µs)
4.0max
tf
(µs)
0.5max
External Dimensions MT-25(TO220)
10.2±0.2
4.8±0.2
2.0±0.1
a ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5 2.5
1.4
BCE
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
3 400mA
300mA
200mA
150mA
2
100mA
1 IB=40mA
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
1.5
IC/IB=5 Const.
1.0
VBE(sat)
0.5
0
0.03 0.05
VCE(sat)
0.1 0.5 1
Collector Current IC(A)
5
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
5
4
3
2
1
0
0 0.5 1.0
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40
125˚C
(VCE=4V)
25˚C
–55˚C
10
5
4
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
56
t on• t stg• t f– I C Characteristics (Typical)
7
5
VCC 250V
IC:IB1:IB2=1:0.15:–0.45
1
0.5
tf
tstg
ton
θ j-a– t Characteristics
4
1
0.5
0.1
0.2
0.5 1
Collector Current IC(A)
0.3
31
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
7
5
100µs 50µs
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.01
10
130
50 100
Collector-Emitter Voltage VCE(V)
500
Reverse Bias Safe Operating Area
7
5
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
0.01
10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
50
40
30
20
10
Without Heatsink
2
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet C5239.PDF ] | |
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