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What is VS-MURB820-1PbF?

This electronic component, produced by the manufacturer "Vishay", performs the same function as "Ultrafast Rectifier ( Diode )".


VS-MURB820-1PbF Datasheet PDF - Vishay

Part Number VS-MURB820-1PbF
Description Ultrafast Rectifier ( Diode )
Manufacturers Vishay 
Logo Vishay Logo 


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VS-MURB820PbF, VS-MURB820-1PbF
Vishay High Power Products
Ultrafast Rectifier, 8 A FRED Pt®
VS-MURB820PbF
VS-MURB820-1PbF
Base
cathode
2
13
N/C Anode
D2PAK
2
1
N/C
3
Anode
TO-262
PRODUCT SUMMARY
trr
IF(AV)
VR
25 ns
8A
200 V
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
Total device, rated VR, TC = 150 °C
Rated VR, square wave, 20 kHz, TC = 150 °C
MAX.
200
8
100
16
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
200
Forward voltage
IF = 8 A
VF
IF = 8 A, TJ = 150 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 200 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
-
-
-
-
25
8.0
MAX.
-
0.975
0.895
5
250
-
-
UNITS
V
μA
pF
nH
Document Number: 94081
Revision: 11-Mar-10
For technical questions, contact: [email protected]
www.vishay.com
1

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VS-MURB820-1PbF equivalent
VS-MURB820PbF, VS-MURB820-1PbF
Ultrafast Rectifier,
8 A FRED Pt®
Vishay High Power Products
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 IRRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94081
Revision: 11-Mar-10
For technical questions, contact: [email protected]
www.vishay.com
5


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