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Numéro de référence | MBRB1635 | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | IRF | ||
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1 Page
SCHOTTKY RECTIFIER
Bulletin PD-2.319 rev. C 01/03
MBR1635/ MBR1645
MBRB1635/ MBRB1645
16 Amp
Major Ratings and Characteristics
Characteristics
MBR16.. Units
IF(AV) Rectangular
waveform
VRRM
IFSM @ tp = 5 µs sine
VF @16 Apk, TJ = 125°C
16
35/45
1800
0.57
A
V
A
V
TJ - 65 to 150 °C
Description/ Features
The MBR16.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
150° C TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
MBR1635/ MBR1645
Case Styles
MBRB1635/ MBRB1645
Base
Cathode
1
Cathode
3
Anode
TO-220AC
www.irf.com
Base
Cathode
2
1
N/C
3
Anode
D2PAK
1
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Pages | Pages 7 | ||
Télécharger | [ MBRB1635 ] |
No | Description détaillée | Fabricant |
MBRB1635 | Schottky Rectifier ( Diode ) | General Semiconductor |
MBRB1635 | Schottky Rectifier ( Diode ) | IRF |
MBRB1635 | Schottky Barrier Rectifier ( Diode ) | Vishay |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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