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KODENSHI KOREA - Advanced N-Ch Power MOSFET

Numéro de référence SMK1060F
Description Advanced N-Ch Power MOSFET
Fabricant KODENSHI KOREA 
Logo KODENSHI KOREA 





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SMK1060F fiche technique
SMK1060F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BVDSS=600V(Min.)
Low Crss : Crss=18pF(Typ.)
Low gate charge : Qg=35nC(Typ.)
Low RDS(on) : RDS(on)=0.75Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK1060F
SMK1060
TO-220F-3L
PIN Connection
GDS
G
TO-220F-3L
Marking Diagram
AAUUKK
SMGΔKYYM1M0D6DD0D
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
D
S
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current (DC) *
Drain current (Pulsed) *
ID
TC=25C
TC=100C
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600
30
10
5.8
38
40
10
480
10
11.6
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
3.1
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
KSD-T0O030-003
1

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