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Numéro de référence | BDX87C | ||
Description | Silicon NPN Darlington Power Transistor | ||
Fabricant | INCHANGE | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX87/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A
80V(Min)- BDX87B; 100V(Min)- BDX87C
·Complement to Type BDX88/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX87
45
UNIT
VCBO
Collector-Base Voltage
BDX87A
BDX87B
60
80
V
BDX87C 100
BDX87
45
VCEO
BDX87A
Collector-Emitter Voltage
BDX87B
60
80
V
BDX87C 100
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
12 A
ICM Collector Current-Peak
18 A
IB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
200 mA
120 W
200 ℃
Tstg Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.45 ℃/W
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BDX87C ] |
No | Description détaillée | Fabricant |
BDX87 | Power Darlingtons | STMicroelectronics |
BDX87 | Silicon NPN Darlington Power Transistor | INCHANGE |
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