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BDX87 fiches techniques PDF

INCHANGE - Silicon NPN Darlington Power Transistor

Numéro de référence BDX87
Description Silicon NPN Darlington Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





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BDX87 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX87/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A
80V(Min)- BDX87B; 100V(Min)- BDX87C
·Complement to Type BDX88/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BDX87
45
UNIT
VCBO
Collector-Base Voltage
BDX87A
BDX87B
60
80
V
BDX87C 100
BDX87
45
VCEO
BDX87A
Collector-Emitter Voltage
BDX87B
60
80
V
BDX87C 100
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
12 A
ICM Collector Current-Peak
18 A
IB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
200 mA
120 W
200
Tstg Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.45 /W
isc websitewww.iscsemi.cn
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