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PDF FDC8884 Data sheet ( Hoja de datos )
| Número de pieza | FDC8884 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDC8884
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
January 2012
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
High performance trench technology for extremely low rDS(on)
Fast switching speed
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on) switching performance.
Application
Primary Switch
S
D
D
Pin 1
D
D
SuperSOTTM -6
G
S4
D5
D6
3G
2D
1D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
-Continuous
TA = 25 °C
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
8.0
6.5
25
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
30
78
°C/W
Device Marking
.884
Device
FDC8884
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDC8884 Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
0.005
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 175 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDC8884 Rev.C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDC8884.PDF ] | |
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