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Numéro de référence | FDC8602 | ||
Description | Dual N-Channel Shielded Gate PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
May 2013
FDC8602
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 1.2 A, 350 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
100% UIL Tested
Load Switch
RoHS Compliant
Synchronous Rectifier
D2
S1
D1
Pin 1
G2
S2
G1
SuperSOTTM -6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
1.2
5
1.5
0.96
0.69
-55 to +150
Units
V
V
A
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
60
130
°C/W
Device Marking
.862
Device
FDC8602
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDC8602 Rev.C1
1
www.fairchildsemi.com
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Pages | Pages 7 | ||
Télécharger | [ FDC8602 ] |
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