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Infineon Technologies - Power Transistor

Numéro de référence IPI110N20N3G
Description Power Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPI110N20N3G fiche technique
IPB107N20N3 G IPP110N20N3 G
IPI110N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
200 V
10.7 mW
88 A
Type
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G
Package
Marking
PG-TO263-3
107N20N
PG-TO220-3
110N20N
PG-TO262-3
110N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
88
63
352
560
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.3
page 1
2011-07-14

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