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T1M5F600A fiches techniques PDF

Lite-On - Sensitive Gate Triacs

Numéro de référence T1M5F600A
Description Sensitive Gate Triacs
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T1M5F600A fiche technique
LITE-ON
SEMICONDUCTOR
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/msec
at 110 )
Commutating di/dt of 1.6 Amps/msec at 110
High Surge Current of 12 Amps
Pb-Free Package
T1M5F-A SERIES
TRIACs
1.0 AMPERES RMS
400 thru 600 VOLTS
TO-92 (TO-226AA)
TO-92
DIM. MIN. MAX.
A 4.45 4.70
B 4.32 5.33
C 3.18 4.19
D 1.15 1.39
E 2.42 2.66
F 12.7 ------
G 2.04 2.66
H 2.93 -----
I 3.43 -----
All Dimensions in millimeter
PIN ASSIGNMENT
1 Main Terminal 1
2 Gate
3 Main Terminal 2
MAXIMUM RATINGS (Tj= 25 unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (TJ= -40 to 110 , Sine Wave, 50 to 60 Hz; Gate Open)
T1M5F400A
T1M5F600A
Symbol
VDRM,
VRRM
Value
400
600
Unit
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (TC = 50 )
Peak Non-Repetitive Surge Current
Full Cycle Sine Wave 60 Hz (Tj =25 )
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t 2.0us ,Tc = 80 )
Average Gate Power (Tc = 80 , t 8.3 ms )
Peak Gate Current ( t 2.0us ,Tc = 80 )
Peak Gate Voltage ( t 2.0us ,Tc = 80 )
Operating Junction Temperature Range
Storage Temperature Range
Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
IT(RMS)
1.0 Amp
ITSM
2
It
12.0
Amps
0.60
2
As
PGM
5.0 Watt
PG(AV)
0.1 Watt
IGM 1.0 Amp
VGM
5.0 Volts
TJ -40 to +110
Tstg -40 to +150
REV. 2, Jun-2005, KTXD11

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