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PDF KSP2907 Data sheet ( Hoja de datos )
| Número de pieza | KSP2907 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KSP2907
General Purpose Transistor
• Collector-Emitter Voltage: VCEO= 40V
• Collector Dissipation: PC(max)=625mW
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Emitter 2. Base 3. Collector
Value
-60
-40
-5
-600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE (sat)
VCE (sat)
Cob
Collector-Base Breakdown Voltage
* Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
* Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
IC= -10µA, IE=0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCB= -50V, IE=0
IC= -0.1mA, VCE= -10V
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA,
VCE= -10V, *IC= -150mA
VCE= -10V, *IC= -500mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
VCB= -10V, IE=0
f=1MHz
fT
* Current Gain Bandwidth Product
IC= -50mA, VCE= -20V
f=100MHz
tON Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as a PN2907
VCC= -30V, IC= -150mA
IB1= -15mA
VCC= -6V, IC= -150mA
IB1=IB2= -15mA
Min.
-60
-40
-5
35
50
75
100
30
200
Typ.
Max.
-20
Units
V
V
V
nA
300
-0.4 V
-1.6 V
-1.3 V
-2.6 V
8 pF
MHz
45 ns
100 ns
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSP2907.PDF ] | |
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