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PDF K3511 Data sheet ( Hoja de datos )
| Número de pieza | K3511 | |
| Descripción | MOS Field Effect Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
MOSFET
MOS Field Effect Transistor
2SK3511
Features
Super low on-state resistance:
RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A)
Low Ciss: Ciss = 5900 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Rating
75
20
83
260
100
1.5
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=75V,VGS=0
10 A
VGS= 20V,VDS=0
10 A
VDS=10V,ID=1mA
2.0 3.0 4.0 V
VDS=10V,ID=42A
21 45
S
VGS=10V,ID=42A
9.5 12.5 m
5900
pF
VDS=10V,VGS=0,f=1MHZ
810 pF
400 pF
30 ns
ID=42A,VGS(on)=10V,RL=10 ,VDD=38V
21
72
ns
ns
12 ns
100 nC
ID =83A, VDD =60V, VGS = 10 V
24 nC
35 nC
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| PDF Descargar | [ Datasheet K3511.PDF ] | |
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