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PDF EMP8040 Data sheet ( Hoja de datos )
| Número de pieza | EMP8040 | |
| Descripción | Low-Dropout Linear Regulator | |
| Fabricantes | Elite Semiconductor | |
| Logotipo |  |
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ESMT/EMP
EMP8040
High Input Voltage, Low Quiescent Current,
Low-Dropout Linear Regulator
General Description
The EMP8040 is a high voltage, low quiescent current,
low dropout regulator with 100mA output driving
capacity. The EMP8040, which operates over an
input range of 3V to 36V, is stable with any
capacitors, whose capacitance is larger than 1μF,
and suitable for powering battery-management ICs
because of the virtue of its low quiescent current
consumption and low dropout voltage. EMP8040
also includes bandgap voltage reference, constant
current limiting and thermal overload protection.
Applications
g Logic Supply for High Voltage Batteries
g Keep-Alive Supply
g 3-4 Cell Li-ion Batteries Powered systems
Features
g 100mA guaranteed output current
g 500mV typical dropout at Io=100mA
g 10µA typical quiescent current
g 1µA typical shutdown mode
g 3.0V to 36V input range
g Stable with small ceramic output capacitors
(1µF)
g Over temperature and over current
protection
g ±2.5% output voltage tolerance
Typical Application
EMP8040
VIN
1F
1
3
VOUT
=
⎜⎛1 +
⎝
R1
R2
⎟⎞
⎠
⋅
Vref
VIN
EN
GND
IGND
2
VOUT
ADJ
5
R1
4
R2
VOUT
1F
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
1/12
1 page  
ESMT/EMP
EMP8040
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications do not
apply when operating the device outside of its rated operating conditions.
Note 2: All voltages are with respect to the potential at the ground pin.
Note 3: Maximum Power dissipation for the device is calculated using the following equations:
P
=
T
J
(MAX)
-
T
A
Dθ
JA
Where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the
junction-to-ambient thermal resistance. E.g. for the SOT-23-5 packageθJA = 152°C/W, TJ (MAX) = 150°C and
using TA = 25°C, the maximum power dissipation is found to be 822mW. The derating factor (-1/θJA) =
-6.57mW/°C, thus below 25°C the power dissipation figure can be increased by 6.57mW per degree, and
similarity decreased by this factor for temperatures above 25°C.
z θJC represents the resistance between the chip and the top of the package case.
Note 4: Typical Values represent the most likely parametric norm
Note 5: Dropout voltage is measured by reducing VIN until VOUT drops to 98% its nominal value.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
5/12
5 Page 
ESMT/EMP
Revision History
Revision
0.1
Date
2011.01.06
1.0 2011.02.23
EMP8040
Description
Original
1. Skip “Preliminary”
2. Revise page3 “FIG.1”
3. Revise page4 “Electrical Characteristics”
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet EMP8040.PDF ] | |
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