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PDF EMA1001 Data sheet ( Hoja de datos )
| Número de pieza | EMA1001 | |
| Descripción | 1W Mono Audio Power Amplifier | |
| Fabricantes | Elite Semiconductor | |
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ESMT/EMP
EMA1001
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily
designed for portable communication applications
such as mobile phones and portable multimedia
players (PMP). To an 8Ω BTL load, it can deliver 1 watt of
continuous average power with less than 1% distortion
(THD+N) from a 5VDC supply.
The EMA1001 is pin-compatible to National Semi’s
LM4890 with a superior (THD+N). It does not require
output coupling capacitors or bootstrap capacitors,
and is ideal for mobile phone and other low voltage
applications where minimal power consumption is a
primary requirement.
The EMA1001 features a low-power consumption
shutdown mode, and an internal thermal shutdown
protection mechanism. Advanced pop & click circuitry
is built in to eliminate noises that would otherwise occur
during turn-on and turn-off transitions. The EMA1001 is
unity-gain stable and can be configured by external
gain-setting resistors.
EMP products are Pb-free and RoHS compliant.
Key Specifications
PSRR at 217Hz, VDD = 5V (Fig. 1) 60dB(typ.)
Power Output at 5.0V & 1% THD 1W(typ.)
Power Output at 2.6V & 1% THD 250mW(typ.)
Shutdown Current
0.1µA(typ.)
Features
Available in space-saving MSOP package
Ultra low current shutdown mode
BTL output driving capacitive loads
Improved pop & click circuitry eliminating noises
during turn-on and turn-off transitions
2.2 - 5.5V operation
No output coupling capacitors, snubber networks
or bootstrap capacitors required
Thermal shutdown protection
Unity-gain stable
External gain configuration capability
Applications
Mobile Phones
PDAs and PMPs
Portable Electronic Devices
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 5.0
1/19
1 page  
ESMT/EMP
EMA1001
Electrical Characteristics VDD = 2.6V (Notes 1, 2, 8)
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
Conditions
Units
Typical
Limit
(Limits)
Symbol Parameter
Conditions
(Note 6) (Notes 7, 9)
IDD
Quiescent Power Supply
VIN = 0V, Io = 0A, NoLoad
3
Current
VIN = 0V, 8Ω Load
4
5 mA (max)
9 mA (max)
ISD Shutdown Current
VSHUTDOWN = 0V
0.1 1.0 µA (max)
VSDIH
Shutdown Voltage Input High
1.2 V (min)
VSDIL
Shutdown Voltage Input Low
0.4 V (max)
VOS Output Offset Voltage
5 25 mV (max)
PO Output Power ( 8Ω)
THD = 1% (max); f = 1 kHz
0.25
0.20 W(min)
TWU Wake-up time
Cbypass =1uF
100 220 ms (max)
TSD Thermal Shutdown
Temperature
160 140 °C (min)
180 °C (max)
THD+N
Total Harmonic Distortion +
Noise
PO = 0.2 Wrms; f = 1kHz
0.03
%
PSRR
(Note 10)
Power Supply Rejection Ratio
Vripple = 200mV sine p-p
Input Terminated with 10
60 (f =217Hz)
65 (f = 1kHz)
55 dB (min)
ohms to ground
TSDT Shut Down Time
8 Ω load
0.1 ms (max)
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not guarantee
specific performance limits. Electrical Characteristics state DC and AC electrical specifications
under particular test conditions, which guarantee specific performance limits. This assumes that the
device is within the Operating Ratings. Specifications are not guaranteed for parameters where no
limit is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated
b=y(TTJJMMAAXX–,TθAJ)A/, aθnJdAtoher tahemnbuiemnbt etermgipveernaitnurAebTsAo. lTuhtee
maximum
Maximum
allowable power dissipation is PDMAX
Ratings, whichever is lower. For the
EMA1001, see power derating curves for additional information.
Note 4: Human body model, 100 pF discharged through a 1.5 kΩresistor.
Note 5: Machine Model, 220 pF–240 pF discharged through all pins.
Note 6: Typicals are measured at 25°C and represent the parametric norm.
Note 7: Limits are guaranteed to EMP’s AOQL (Average Outgoing Quality Level).
Note 8: Shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will
increase ISD by a maximum of 2µA.
Note 9: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 10: PSRR is a function of system gain. Specifications apply to the circuit in Figure 1 where AV = 2.
Higher system gains will reduce PSRR value by the amount of gain increase. A system gain of 10
represents a gain increase of 14dB. PSRR will be reduced by 14dB and applies to all operating
voltages.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 5.0
5/19
5 Page 
ESMT/EMP
EMA1001
obtain the specified output power. By extrapolating from
the Output Power vs Supply Voltage graphs in the Typical
Performance Characteristics section, the supply rail can be
easily found. In more applications, 5V is chosen as a
standard voltage for the supply rail. Extra supply voltage
creates headroom, which allows the EMA1001 to
reproduce peaks in excess of 1W without producing
audible distortion. At this stage, the designer must make
sure that the power supply choice along with the output
impedance does not violate the conditions described in
the Power Dissipation section.
Once the power dissipation equations are addressed, the
required differential gain can be determined from Equation
3.
AVD ≧(PORL)1/2/Vin = Vorms/Vinrms (3)
Rf/R2 = AVD/2
From Equation 3, the minimum AVD is 2.83; use AVD = 3.
Since the desired input impedance is 20 kΩ, and with an
AVD gain of 3, a ratio of 1.5:1 of Rf to R2 results in an
allocation of R2 = 20 kΩ and Rf = 30 kΩ. The final design
step is to address the bandwidth requirements, which must
be stated as a pair of -3 dB frequency points. Five times
away from a -3 dB point is 0.17 dB down from passband
response, which is better than the required ±0.25 dB
specified.
fL = 100Hz/5 = 20Hz
fH = 20kHz * 5 = 100kHz
As stated in the External Components section, R2 and C2
create a high-pass filter.
C2≥ 1/(2π*20 kΩ*20Hz) = 0.397µF; use 0.39µF.
The high frequency pole is the product of the desired
frequency pole, fH, and the differential gain, AVD. With a
AVD = 3 and fH = 100kHz, the resulting GBWP = 300kHz which
is much smaller than the EMA1001 GBWP of 2.5MHz. This
calculation shows that if a designer has a need to design
an amplifier with a higher differential gain, the EMA1001
can still be used without running into bandwidth limitations.
C4 R3
VDD
C1
1μF
R2
+ C2 20kΩ
-IN
4
+
0.39μF
+- IN
3 VDD
SW
+
-
A1
+
VO1 -
20k
RL
8Ω
J2
500K
250k
VDD
R1
20kΩ
C3
1μF
J1
Bypass
2
250k
Shutdown
1
120k
GND
20k
-
A2
+
+
VO2
FIGURE 2. HIGHER GAIN AUDIO AMPLIFIER
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 5.0
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet EMA1001.PDF ] | |
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