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Datasheet LZ4-00A100-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
LZ4 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | LZ4-00A100 | High Luminous Efficacy Amber LED Emitter High Luminous Efficacy Amber LED Emitter
LZ4-00A100
Key Features
High Luminous Efficacy 10W Amber LED Ultra-small foot print – 7.0mm x 7.0mm Surface mount ceramic package with integrated glass lens Very low Thermal Resistance (1.1°C/W) Individually add LED Engin led | | |
2 | LZ4-20A100 | High Luminous Efficacy Amber LED Emitter High Luminous Efficacy Amber LED Emitter
LZ4-00A100
Key Features
High Luminous Efficacy 10W Amber LED Ultra-small foot print – 7.0mm x 7.0mm Surface mount ceramic package with integrated glass lens Very low Thermal Resistance (1.1°C/W) Individually add LED Engin led | | |
3 | LZ4-40A100 | High Luminous Efficacy Amber LED Emitter High Luminous Efficacy Amber LED Emitter
LZ4-00A100
Key Features
High Luminous Efficacy 10W Amber LED Ultra-small foot print – 7.0mm x 7.0mm Surface mount ceramic package with integrated glass lens Very low Thermal Resistance (1.1°C/W) Individually add LED Engin led | | |
4 | LZ402 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR polyfet rf devices
LZ402
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | |
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