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PDF PBSS4360Z Data sheet ( Hoja de datos )
| Número de pieza | PBSS4360Z | |
| Descripción | 3A NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4360Z
60 V, 3 A NPN low VCEsat (BISS) transistor
26 February 2014
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; single pulse
collector-emitter
saturation resistance
IC = 2 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 3A
- - 6A
- - 140 mΩ
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1 page  
NXP Semiconductors
PBSS4360Z
60 V, 3 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
10 0.1
0.05
0.02 0.01
1
0
aaa-010995
10-1
10-5
10-4
10-3
10-2
10-1
1
10
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-010996
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
0.5
10 0.1
0.2
0.05
0.02
1 0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4360Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 February 2014
© NXP N.V. 2014. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
PBSS4360Z v.1
20140226
PBSS4360Z
60 V, 3 A NPN low VCEsat (BISS) transistor
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PBSS4360Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 February 2014
© NXP N.V. 2014. All rights reserved
11 / 14
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