DataSheetWiki


C1984L fiches techniques PDF

Secos - NPN Transistor - 2SC1984L

Numéro de référence C1984L
Description NPN Transistor - 2SC1984L
Fabricant Secos 
Logo Secos 





1 Page

No Preview Available !





C1984L fiche technique
Elektronische Bauelemente
2SC1383L/2SC1384L
www.DataSheet4U.com
NPN Silicon
General Purpose Transistor
FEATURE
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.9±0.2
TO-92L
3 . 9 ±0. 2
Power dissipation
PCM: 1 W (Tamb=25)
Collector current
ICM: 1 A
Collector-base voltage
V(BR)CBO: 2SC1383L: 30 V
2SC1384L: 60 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1.0±0.1
0.
4
5
+0 . 1
–0.1
0 . 4 0 +–00.. 0055
(1.27 Typ.)
123
1.
4
+0.R2
–0.2
2.54±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
2SC1383L
2SC1384L
2SC1383L
2SC1384L
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test conditions
Ic= 10µA , IE=0
IC=2mA , IB=0
IE= 10µA, IC=0
ICBO VCB=20V , IE=0
hFE(1)
VCE=10 V, IC= 500mA
hFE(2)
VCE=5 V, IC= 1A
VCE(sat)
IC= 500m A, IB=50mA
VBE(sat) IC= 500mA , IB= 50mA
MIN
30
60
25
50
5
85
50
MAX UNIT
V
V
V
0.1 µA
340
0.4 V
1.2 V
Transition frequency
fT
VCE= 10 V, IC= 50mA
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3

PagesPages 3
Télécharger [ C1984L ]


Fiche technique recommandé

No Description détaillée Fabricant
C1984L NPN Transistor - 2SC1984L Secos
Secos

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche