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Numéro de référence | FLM1415-8F | ||
Description | Ku-Band Internally Matched FET | ||
Fabricant | SUMITOMO | ||
Logo | |||
1 Page
FLM1415-8F
Ku-Band Internally Matched FET
FEATURES
•High Output Power: P1dB=39.0dBm(Typ.)
•High Gain: G1dB=5.0dB(Typ.)
•High PAE: ηadd=25%(Typ.)
•Broad Band: 14.5 to 15.3GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
DESCRIPTION
The FLM1415-8F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Ite m
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
VDS
V GS
PT
Tstg
Tch
15
-5
42.8
-65 to +175
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Channel Tem perature
VDS
IGF RG=100 ohm
IGR RG=100 ohm
Tch
≤10
≤32.0
≥-4.4
150
Unit
V
mA
mA
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
Therm al Resistance
Channel Tem perature Rise
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
Nadd
∆G
Rth
∆Tch
VDS=5V , VGS=0V
VDS=5V , IDS=2200mA
VDS=5V , IDS=170mA
IGS=-170uA
VDS=10V
IDSDC=0.65 IDSS (typ.)
f= 14.5 to 15.3 GHz
Zs=ZL=50 ohm
Channel to Case
10V x Idsr X Rth
CASE STYLE : IA
ESD Class 3A 4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
M in.
-
-
-0.5
-5.0
38.0
4.0
-
-
-
-
-
Lim it
Typ. Max.
Unit
3400
3400
-1.5
-
39.0
5.0
2200
25
-
3.0
-
5200
-
-3.0
-
-
-
2600
-
1.2
3.5
80
mA
mS
V
V
dBm
dB
A
%
dB
deg.C/W
deg.C
G.C.P.: Gain Compression Point
RoHS COMPLIANCE
Ye s
Edition 1.3
Jul. 2012
1
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Pages | Pages 5 | ||
Télécharger | [ FLM1415-8F ] |
No | Description détaillée | Fabricant |
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