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Número de pieza | FLM1414-15F | |
Descripción | X / Ku-Band Internally Matched FET | |
Fabricantes | Eudyna | |
Logotipo | ||
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No Preview Available ! FLM1414-15F
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=6.0dB(Typ.)
・High PAE: ηadd=26%(Typ.)
・Broad Band: 14.0~14.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1414-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT
75 W
Storage Temperature
Tstg
-65 to +175
oC
Channel Temperature
Tch
175 oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≦10
Forward Gate Current
IGF RG=50Ω
≦48
Reverse Gate Current
IGR RG=50Ω
≧-6.6
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol
Test Conditions
Min.
Limit
Typ.
Max. Unit
Drain Current
IDSS
VDS=5V , VGS=0V
- 7.2 10.0 A
Transconductance
gm
VDS=5V , IDS=3600mA
-
6700
-
mS
Pinch-off Voltage
Vp VDS=5V , IDS=300mA -0.5 -1.5 -3.0 V
Gate-Source Breakdown Voltage
VGSO
IGS=-340µA
-5.0 - - V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
P1dB
G1dB
Idsr
ηadd
VDS=10V
f=14.0 - 14.5 GHz
IDS=0.6IDSS(typ)
Zs=ZL=50Ω
41.5 42.0
5.0 6.0
- 4200
- 26
-
-
5000
-
dBm
dB
mA
%
Gain Flatness
∆G
- - 1.2 dB
3rd Order Intermodulation
Distortion
IM3 f=14.5 GHz
-42.0 -45.0
- dBc
Δf=10MHz,2-Tone Test
Pout=30.0dBm(S.C.L.)
Thermal Resistance
Rth Channel to Case
- 1.8 2.0 oC /W
Channel Temperature Rise
∆ Tch
10V x Idsr X Rth
- - 80 oC
CASE STYLE: IB
G.C.P.:Gain Compression Point , S.C.L.:Single Carrier Level
ESD
Class III
2000V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.4
May 2004
1
1 page FLM1414-15F
X,Ku-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong kong
TEL: +852-2377-0227
FAX: +852-2377-3921
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet FLM1414-15F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FLM1414-15F | X / Ku-Band Internally Matched FET | Eudyna |
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