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FLM1314-8F fiches techniques PDF

Eudyna - X / Ku-Band Internally Matched FET

Numéro de référence FLM1314-8F
Description X / Ku-Band Internally Matched FET
Fabricant Eudyna 
Logo Eudyna 





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FLM1314-8F fiche technique
FLM1314-8F
FEATURES
• High Output Power: P1dB = 39.0dBm (Typ.)
• High Gain: G1dB = 6.0dB (Typ.)
• High PAE: ηadd = 28% (Typ.)
• Low IM3 = -45dBc@Po = 28.0dBm
• Broad Band: 13.75 ~ 14.5GHz
• Impedance Matched Zin/Zout = 50
X, Ku-Band Internally Matched FET
DESCRIPTION
The FLM1314-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100.
Rating
15
-5
45.5
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2400mA
-
-
3900 5900
3900 -
mA
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 196mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
VGSO
P1dB
G1dB
Idsr
ηadd
G
IGS = -196µA
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 13.75 ~ 14.5 GHz,
ZS=ZL=50 ohm
-5.0 -
-
38.5 39.0 -
5.0 6.0 -
- 2400 3000
- 28 -
- - ±0.6
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 14.5GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 28.0dBm S.C.L.
-42 -45
-
Rth Channel to Case
- 2.8 3.3
dBc
°C/W
Channel Temperature Rise
Tch 10V x Idsr x Rth
- - 80
°C
CASE STYLE: IA
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1

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