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PDF FLM1213-6F Data sheet ( Hoja de datos )
| Número de pieza | FLM1213-6F | |
| Descripción | X / Ku-Band Internally Matched FET | |
| Fabricantes | Eudyna | |
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FLM1213-6F
FEATURES
•High Output Power: P1dB=37.5dBm(Typ.)
•High Gain: G1dB=7.0dB(Typ.)
•High PAE: ηadd=27%(Typ.)
•Low IM3 =-46dBc(Typ.) @Po=26.5dBm
•Broad Band: 12.7 to 13.2GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1213-6F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Ite m
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
V GS
-5
Total Pow er Dissipation
PT
31.2
Storage Tem perature
Tstg
-65 to +175
Channel Tem perature
Tch
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF RG=100 ohm
IGR RG=100 ohm
≤10
≤26.0
≥-2.8
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Dis tor tion
Sym bol
IDSS
gm
Vp
V GSO
P1dB
G1dB
Idsr
Nadd
∆G
IM3
Condition
VDS=5V , VGS=0V
VDS=5V , IDS=1800mA
VDS=5V , IDS=120mA
IGS=-120uA
VDS=10V
IDSDC=0.60 IDSS (typ.)
f= 12.7 to 13.2 GHz
Zs=ZL=50 ohm
f=13.2 GHz
∆f=10MHz，2-tone Test
Pout=25.0dBm (S.C.L.)
M in.
-
-
-0.5
-5.0
36.5
6.0
-
-
-
-42
Lim it
Typ.
2800
2350
-1.5
-
37.5
7.0
1650
28
-
-49
M ax.
4200
-
-3.0
-
-
-
2100
-
1.2
-
Unit
mA
mS
V
V
dBm
dB
A
%
dB
dBc
Therm al Resistance
Rth Channel to Case
- 4.0 4.5 deg.C/W
Channel Tem perature Rise
∆Tch
10V x Idsr X Rth
-
- 80
deg.C
CASE STYLE : IA
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD Class 3A 4000 to 8000V
Note : Based on JEDEC JESD22-A114D (C=100pF, R=1500ohm)
RoHS COMPLIANCE
Ye s
Edition 1.6
Jul. 2012
1
1 page  
FLM1213-6F
X,Ku-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.6
Jul. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FLM1213-6F.PDF ] | |
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