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Numéro de référence | FLM1011-15F | ||
Description | X / Ku-Band Internally Matched FET | ||
Fabricant | SUMITOMO | ||
Logo | |||
1 Page
FLM1011-15F
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=31%(Typ.)
・Broad Band: 10.7~11.7GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION
The FLM1011-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
Storage Temperature
Channel Temperature
PT
Tstg
Tch
57.7
-65 to +175
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤10
Forward Gate Current
IGF RG=50Ω
≤16.7
Reverse Gate Current
IGR RG=50Ω
≥-3.62
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
∆G
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=4.55A
VDS=5V, IDS=300mA
IGS=-300uA
VDS=10V
f=10.7 - 11.7 GHz
IDS=0.5Idss (typ)
Zs=ZL=50Ω
Min.
-
-
-0.5
-5.0
41.0
6.0
-
-
-
Limit
Typ.
7.2
4500
-1.5
-
42.0
7.0
4.0
31
-
Max.
10.8
-
-3.0
-
-
-
5.0
-
1.2
Unit
A
mS
V
V
dBm
dB
A
%
dB
Thermal Resistance
Channel Temperature Rise
Rth
∆Tch
Channel to Case
10V x Idsr x Rth
- 2.3 2.6 oC/W
- - 100 oC
3rd Order Intermodulation
Distortion
CASE STYLE: IB
f=11.7GHz,
IM3
∆ f=10MHz, 2-Tone Test
-42
-45
-
dBc
Pout=30.0dBm S.C.L.
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ESD
Class III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
1
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Pages | Pages 5 | ||
Télécharger | [ FLM1011-15F ] |
No | Description détaillée | Fabricant |
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