DataSheetWiki


FLM1011-6F fiches techniques PDF

SUMITOMO - X / Ku-Band Internally Matched FET

Numéro de référence FLM1011-6F
Description X / Ku-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





1 Page

No Preview Available !





FLM1011-6F fiche technique
FLM1011-6F
X, Ku-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 37.5dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: ηadd = 28% (Typ.)
• Low IM3 = -45dBc@Po = 25dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
DESCRIPTION
The FLM1011-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
31.2 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 2800 4200
mA
Transconductance
gm VDS = 5V, IDS = 1800mA - 2350 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 120mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -120µA
-5 -
-
V
Output Power at 1dB G.C.P.
P1dB
36.5 37.5 -
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
G1dB
Idsr
ηadd
VDS = 10V,
IDS = 0.6 IDSS(Typ.),
f = 10.7 ~ 11.7 GHz,
ZS = ZL = 50
6.5 7.5 -
- 1800 2100
- 28 -
dB
mA
%
Gain Flatness
G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 11.7GHz, f = 10MHz
IM3 2-Tone Test
-42 -45
Pout = 25dBm S.C.L.
-
Rth Channel to Case
- 4.0 4.5
dBc
°C/W
CASE STYLE: IA
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.4
August 2004
1

PagesPages 4
Télécharger [ FLM1011-6F ]


Fiche technique recommandé

No Description détaillée Fabricant
FLM1011-6F X / Ku-Band Internally Matched FET SUMITOMO
SUMITOMO

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche