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FLM0910-12F fiches techniques PDF

SUMITOMO - X-Band Internally Matched FET

Numéro de référence FLM0910-12F
Description X-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





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FLM0910-12F fiche technique
FLM0910-12F
X-Band Internally Matched FET
FEATURES
High Output Power: P1dB=40.5dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE: ηadd=25%(Typ.)
Broad Band: 9.5~10.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
DESCRIPTION
The FLM0910-12F is a power GaAs FET that is internally matched
for standard communication and radar bands to provide optimum
power and gain in a 50system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Item
Drain-Source Voltage
Symbol
VDS
Rating
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PTot
57.6
Storage Temperature
Tstg -65 to +175
Channel Temperature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
10
Gate Current
IGS RG=50
32.0
Gate Current
IGR RG=50
-5.6
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=3.6A
VDS=5V, IDS=300mA
IGS=-340uA
VDS=10V
f=9.5 - 10.5 GHz
IDS=0.5Idss (typ.)
Zs=ZL=50
Min.
-
-
-0.5
-5.0
39.5
6.0
-
-
Limit
Typ.
6.0
5000
-1.5
-
40.5
7.0
3.5
25
Gain Flatness
G
--
Max.
9.0
-
-3.0
-
-
-
4.5
-
1.2
Unit
A
mS
V
V
dBm
dB
A
%
dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
Tch
Channel to Case
- 2.3 2.6 oC/W
10V X Idsr X Rth
- - 80 oC
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Note:RF-Test is measured with Vgs-Constant Circuit.
ESD
Class
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
Edition 1.2
September 2004
1

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