DataSheetWiki


FLM8596-4F fiches techniques PDF

SUMITOMO - X / Ku-Band Internally Matched FET

Numéro de référence FLM8596-4F
Description X / Ku-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





1 Page

No Preview Available !





FLM8596-4F fiche technique
FLM8596-4F
FEATURES
X, Ku-Band Internally Matched FET
• High Output Power: P1dB = 36.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3 = -45dBc@Po = 25.5dBm
• Broad Band: 8.5 ~ 9.6GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
DESCRIPTION
The FLM8596-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudynas stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
25.0 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1700 2600
mA
Transconductance
gm VDS = 5V, IDS =1100mA - 1700 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 85mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -85µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
35.5 36.0
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 8.5 ~ 9.6 GHz,
ZS=ZL= 50 ohm
6.5 7.5 -
- 1100 1300
- 29 -
dB
mA
%
Gain Flatness
G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f = 9.6 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 25.5dBm S.C.L.
-42 -45
-
dBc
Thermal Resistance
Rth Channel to Case
- 5.0 6.0
°C/W
Channel Temperature Rise
CASE STYLE: IA
Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1

PagesPages 4
Télécharger [ FLM8596-4F ]


Fiche technique recommandé

No Description détaillée Fabricant
FLM8596-4F Ku-Band Internally Matched FET ETC
ETC
FLM8596-4F X / Ku-Band Internally Matched FET SUMITOMO
SUMITOMO

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche