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FLM7785-6F fiches techniques PDF

SUMITOMO - C-Band Internally Matched FET

Numéro de référence FLM7785-6F
Description C-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





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FLM7785-6F fiche technique
FLM7785-6F
FEATURES
C-Band Internally Matched FET
• High Output Power: P1dB = 38.5dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: ηadd = 31% (Typ.)
• Low IM3 = -46dBc@Po = 27.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed
DESCRIPTION
The FLM7785-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
31.2 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with
gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 2700 4050
mA
Transconductance
gm VDS = 5V, IDS =1200mA - 2500 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS =120mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -150µA
Output Power at 1dB G.C.P.
P1dB
-5 -
37.5 38.5
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 7.7 ~ 8.5 GHz,
ZS=ZL= 50 ohm
7.5 8.5 -
- 1750 2250
- 31 -
dB
mA
%
Gain Flatness
G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f = 8.5 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 27.5dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Rth Channel to Case
- 4.0 4.8
°C/W
Channel Temperature Rise
Tch 10V x Idsr x Rth
- - 80
°C
CASE STYLE: IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1

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