FLM6472-18F Datasheet PDF - SUMITOMO
| Part Number | FLM6472-18F | |
| Description | C-Band Internally Matched FET | |
| Manufacturers | SUMITOMO | |
| Logo |  |
|
|
There is a preview and FLM6472-18F download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
Preview 1 page No Preview Available !
FLM6472-18F
FEATURES
C-Band Internally Matched FET
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 6.4 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
DESCRIPTION
The FLM6472-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15 V
-5 V
Total Power Dissipation
PT Tc = 25°C
83.3 W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 48.0 and -8.4 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
°C
°C
Unit
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4875mA
-
-
7.5 11.25
7500 -
A
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -250µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
42.0 43.0
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
G1dB
Idsr
ηadd
∆G
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 6.4 ~ 7.2 GHz,
ZS=ZL= 50 ohm
8.5 9.5 -
- 4875 6000
- 37 -
- - ±0.6
dB
mA
%
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 7.2 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 32.0dBm S.C.L.
-44 -46
-
Rth Channel to Case
- 1.6 1.8
dBc
°C/W
Channel Temperature Rise
∆Tch 10V x Idsr x Rth
- - 80
°C
CASE STYLE: IK
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1
|
| |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FLM6472-18F electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FLM6472-18F.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| FLM6472-18F | The function is C-Band Internally Matched FET. SUMITOMO | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
FLM6
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||