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Numéro de référence | FLM6472-8F | ||
Description | C-Band Internally Matched FET | ||
Fabricant | SUMITOMO | ||
Logo | |||
1 Page
FLM6472-8F
C-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: hadd = 36% (Typ.)
• Low IM3 = -46dBc@Po = 28.5dBm
• Broad Band: 6.4 to 7.2GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package
DESCRIPTION
The FLM6472-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25deg.C
Storage Temperature
Tstg
Channel Temperature
Tch
SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs:
15
-5
42.8
-65 to +175
175
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forw ard and reverse gate currents should not exceed 32.0 and -4.4 mA respectively w ith
gate resistance of 100ohm.
Unit
V
V
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS=5V, VGS=0V
- 3400 5200 mA
Transconductance
gm VDS=5V, IDS=2200mA
- 3400 -
mS
Pinch-off Voltage
Vp VDS=5V, IDS=170mA
-0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
VGSO
P1dB
G1dB
Idsr
hadd
DG
IGS=-170uA
VDS=10V,
IDS=0.65 IDSS (Typ.),
f=6.4 to 7.2 GHz,
ZS=ZL=50ohm
-5.0 -
-
38.5 39.5 -
8.5 9.5
-
- 2200 2600
- 36 -
- - 1.2
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 7.2 GHz, Df = 10 MHz
IM3 2-Tone Test
Pout = 28.5dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Channel Temperature Rise
Rth
DTch
Channel to Case
- 3.0 3.5 deg.C/W
10V x Idsr x Rth
- - 80 deg.C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE
IB
ESD
Class 3A
Note : Based on JEDEC JESD22-A114 (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.3
Jan. 2013
1
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Pages | Pages 5 | ||
Télécharger | [ FLM6472-8F ] |
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