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PDF FLM5972-4F Data sheet ( Hoja de datos )
| Número de pieza | FLM5972-4F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FLM5972-4F
FEATURES
• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: ηadd = 36% (Typ.)
• Low IM3 = -45dBc@Po = 25.5dBm
• Broad Band: 5.9 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM5972-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
25 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1700 2600
mA
Transconductance
gm VDS = 5V, IDS = 1100mA - 1700 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 85mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -85µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
35.5 36.5
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 7.2 GHz,
ZS=ZL=50 ohm
8.5 9.5 -
- 1100 1300
- 36 -
dB
mA
%
Gain Flatness
∆G
- - ±0.8
dB
3rd Order Intermodulation
Distortion
f = 7.2 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 25.5dBm S.C.L.
-42 -45
-
dBc
Thermal Resistance
Rth Channel to Case
- 5.0 6.0
°C/W
Channel Temperature Rise
∆Tch 10V x Idsr x Rth
- - 80
°C
CASE STYLE: IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM5972-4F.PDF ] | |
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