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FLM5964-12F-001 fiches techniques PDF

SUMITOMO - C-Band Internally Matched FET

Numéro de référence FLM5964-12F-001
Description C-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





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FLM5964-12F-001 fiche technique
FLM5964-12F/001
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=41.5dBm(Typ.)
High Gain: G1dB=9.0dB(Typ.)
High PAE: hadd=37%(Typ.)
Broad Band: 5.85 to 6.75GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package
DESCRIPTION
The FLM5964-12F/001 is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS
Ite m
Drain-Source Voltage (Tc=25deg.C)
Gate-Source Voltage (Tc=25deg.C)
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
Symbol
VDS
V GS
PT
Tstg
Tch
Rating
15
-5
57.6
-65 to +175
+175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION
Ite m
Sym bol
DC Input Voltage
VDS
Forw ard Gate Current
IGF
Reverse Gate Current
IGR
Storage Tem perature
Tstg
Channel Tem perature
Tch
Condition
RG=50 ohm
RG=50 ohm
Recom m end
10
+32.0
-5.6
-55 to +125
+155
Unit
V
mA
mA
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
Min. Typ. Max.
Unit
Drain Current
IDSS VDS=5V , VGS=0V
- 5 7.5 A
Trans conductance
gm VDS=5V , IDS=3.25A
-5-
S
Pinch-off Voltage
Vp VDS=5V , IDS=250mA
-0.5 -1.5 -3.0
V
Gate-Source Breakdow n Voltage
VGSO IGS=-250uA
-5.0 -
-
V
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
P1dB
G1dB
Idsr
η add
DG
VDS=10V
f= 5.85 to 6.75 GHz
IDSDC=0.65Idss (typ.)
Zs=ZL=50 ohm
40.5
8.0
-
-
-
41.5
9.0
3.25
37
-
-
-
3.8
-
1.6
dBm
dB
A
%
dB
3rd Order Interm odulation
Dis tor tion
f=6.75 GHz
IM3 Df=10MHz2-tone Test -42 -45
Pout=30.5dBm (S.C.L.)
-
dBc
Therm al Resistance
Rth Channel to Case
- 2.3 2.6 deg.C/W
Channel Tem perature Rise
DTch
10V x Idsr x Rth
- - 80 deg.C
CASE STYLE : IK
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD Class 3A 4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
RoHS COMPLIANCE
Yes
Edition 1.1
Aug. 2012
1

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