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ELM5964-16F fiches techniques PDF

SUMITOMO - C-Band Internally Matched FET

Numéro de référence ELM5964-16F
Description C-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





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ELM5964-16F fiche technique
FEATURES
High Output Power: P1dB=42.5dBm (Typ)
High Gain: G1dB=10.0dB (Typ.)
High PAE: add=40 %( Typ.)
Frequency Band: 5.9~6.4GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ELM5964-16F
C-Band Internally Matched FET
DESCRIPTION
The ELM5964-16F is a power GaAs FET that is
internally matched for standard communication bands
to provide optimum power and gain in a 50system.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg-C)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
VDS
VGS
PT
15
-5
46.9
Storage Temperature
Channel Temperature
TSTG
TCH
-65 to +175
175
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg-C)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
VDS
IGF
RG=51 ohm
<10
<+43.0
Reverse Gate Current
Storage Temperature
Channel Temperature
IGR
TSTG
TCH
RG=51 ohm
>-11.0
-55 to +125
155
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg-C)
Item
Symbol
Condition
Limit
Min. Typ. Max.
Drain Current
Trans conductance
Pinch-off Voltage
Gage-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
add
G
IM3
VDS=5V, VGS=0V
VDS=5V, IDS=4200mA
VDS=5V, IDS=300mA
IGS=85uA
VDS=10V
IDS(DC)=2.8A(Typ.)
f=5.9~6.4 GHz
f=6.4GHz
f=10MHz, 2-tone Test
Pout=31.5dBm (S.C.L)
- 7.6 11.4
-5-
-0.5 -1.5 -3.0
-5.0 -
-
41.5 42.5
-
9.0 10.0
-
- 4.0 5.0
- 40 -
- - 1.2
-40 -45
-
Rth
Tch
CASE STYLE: IK
Rth
Tch
Channel to Case
(VDS x Idsr Pout + Pin ) x Rth
- 2.7 3.2
- - 100
ESD
Class 3 A 4000-8000V
Note: Based on JEDEC JESD22-A114D (C=100pF, R=1500)
Unit
V
V
W
deg-C
deg-C
Unit
V
mA
mA
deg-C
deg-C
Unit
A
S
V
V
dBm
dB
A
%
dB
dBc
Deg-C/W
Deg-C
1

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