DataSheetWiki


FLM5964-6F fiches techniques PDF

SUMITOMO - C-Band Internally Matched FET

Numéro de référence FLM5964-6F
Description C-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





1 Page

No Preview Available !





FLM5964-6F fiche technique
FLM5964-6F
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB = 38.5dBm (Typ.)
High Gain: G1dB = 10.0dB (Typ.)
High PAE: hadd = 37% (Typ.)
Low IM3 = -46dBc@Po = 27.5dBm
Broad Band: 5.9 to 6.4GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package
DESCRIPTION
The FLM5964-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25deg.C
Storage Temperature
Tstg
Channel Temperature
Tch
SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs:
15
-5
31.2
-65 to +175
175
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forw ard and reverse gate currents should not exceed 16.0 and -2.8 mA respectively w ith
gate resistance of 100ohm.
Unit
V
V
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS=5V, VGS=0V
- 2500 3750 mA
Transconductance
gm VDS=5V, IDS=1625mA
- 2500 -
mS
Pinch-off Voltage
Vp VDS=5V, IDS=125mA
-0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
VGSO
P1dB
G1dB
Idsr
hadd
DG
IGS=-125uA
VDS=10V,
IDS=0.65 IDSS (Typ.),
f=5.9 to 6.4 GHz,
ZS=ZL=50ohm
-5.0 -
-
37.5 38.5 -
9.0 10.0 -
- 1625 1900
- 37 -
- - 1.2
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 6.4 GHz, Df = 10 MHz
IM3 2-Tone Test
Pout = 27.5dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Channel Temperature Rise
Rth
DTch
Channel to Case
- 4.0 4.8 deg.C/W
10V x Idsr x Rth
- - 80 deg.C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE
IB
ESD
Class 3A
Note : Based on JEDEC JESD22-A114 (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.3
Jan. 2013
1

PagesPages 5
Télécharger [ FLM5964-6F ]


Fiche technique recommandé

No Description détaillée Fabricant
FLM5964-6D Internally Matched Power GaAs FETs Fujitsu
Fujitsu
FLM5964-6F C-Band Internally Matched FET Eudyna Devices
Eudyna Devices
FLM5964-6F C-Band Internally Matched FET Fujitsu
Fujitsu
FLM5964-6F C-Band Internally Matched FET SUMITOMO
SUMITOMO

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche