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FLM5359-35F fiches techniques PDF

SUMITOMO - C-Band Internally Matched FET

Numéro de référence FLM5359-35F
Description C-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





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FLM5359-35F fiche technique
FEATURES
High Output Power: P1dB=45.5dBm(Typ.)
High Gain: G1dB=9.0dB(Typ.)
High PAE: hadd=35%(Typ.)
Broad Band: 5.3 to 5.9GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package
FLM5359-35F
C-Band Internally Matched FET
DESCRIPTION
The FLM5359-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT
Storage Temperature
Tstg
Channel Temperature
Tch
Rating
15
-5
115.4
-65 to +175
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
DC Input Voltage
VDS
Forward Gate Current
IGF RG=13ohm
Reverse Gate Current
IGR RG=13ohm
Limit
<= 10
<= 107.2
>=-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
Gain Flatness
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
hadd
DG
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS=-960uA
VDS=10V
f=5.3 to 5.9 GHz
IDS=0.5 Idss (Typ.)
Zs=ZL=50ohm
-
-
-1.0
-5.0
45.0
8.0
-
-
-
16.0
8000
-2.0
-
45.5
9.0
8.5
35
-
24.0
-
-3.5
-
-
-
9.5
-
1.2
A
mS
V
V
dBm
dB
A
%
dB
Thermal Resistance
Channel Temperature Rise
Rth
DTch
Channel to Case
- 1.1 1.3 deg.C/W
10V x Idsr x Rth
- - 100 deg.C
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
CASE STYLE
IK
ESD
Class 3A
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.4
Oct. 2012
1

PagesPages 5
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