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PDF FLM5053-35F Data sheet ( Hoja de datos )
| Número de pieza | FLM5053-35F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FEATURES
・High Output Power: P1dB=45.5dBm(Typ.)
・High Gain: G1dB=8.0dB(Typ.)
・High PAE: ηadd=35%(Typ.)
・Broad Band: 5.0～5.3GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
FLM5053-35F
C-Band Internally Matched FET
DESCRIPTION
The FLM5053-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Ca se Te mpe ra ture Tc=25oC)
Ite m
Sy mbol
Rating
Drain-Source V oltage
VDS
15
Gate -Source V oltage
V GS
-5
Total Pow e r Dis s ipation
PT
115.4
Storage Te m pe rature
Tstg
-65 to +175
Channe l Tem perature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Ca se Te mpe ra ture Tc=25oC)
Ite m
DC Input V oltage
Forw ard Gate Curre nt
Re ve rs e Gate Curre nt
Sym bol
VDS
IGF
IGR
Condition
RG=25 ohm
RG=25 ohm
Lim it
≦10
≦52.0
≧-23.2
Storage Te m pe rature
Tstg
-55 to +125
Unit
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Ca se Te mpe ra ture Tc=25oC)
Ite m
Sym bol
Condition
Lim it
M in. Typ. M ax.
Unit
Drain Curre nt
IDSS
V DS=5V , V GS=0V
- 16.0 -
A
Trans conductance
gm V DS=5V , IDS=8.0A
- 8.0 -
S
Pinch-off Voltage
V p V DS=5V , IDS=960mA
-1.0 -2.0 -3.5
V
Gate -Source Bre ak dow n V oltage
V GSO
IGS=-960uA
-5.0 -
-
V
Output Pow e r at 1dB G.C.P.
Pow e r Gain at 1dB G.C.P.
Drain Curre nt
Pow e r-adde d Efficie ncy
Gain Flatne s s
P1dB
G1dB
Idsr
Nadd
∆G
V DS=10V
f = 5.0 ~ 5.3 GHz
IDSDC=8.5A (typ.)
Zs=ZL=50 ohm
44.5
7.0
-
-
-
45.5
8.0
8.0
35
-
-
-
9.0
-
1.2
dBm
dB
A
%
dB
3rd Orde r Inte rm odulation
Dis tortion
f =5.3 GHz
IM3
∆ f =10MHz，2-tone Test
-42
-45
Pout=34.5dBm (S.C.L.)
-
dBc
The rm al Re s is tance
Rth Channel to Case
- 1.1 1.3
oC/W
Channe l Te m pe rature Ris e
∆ Tch
10V x Idsr X Rth
- - 100
oC
CASE STYLE : IK
G.C.P.: Gain Com pre s s ion Point
ESD
Clas s III 2000V ~
Note : Based on EIA J ED-4701 C-111A (C=100pF, R=1.5kΩ)
Edition 1.1
Feb. 2008
1
1 page  
FLM5053-35F
C-Band Internally Matched FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
http://www.us.eudyna.com/e/index.html
Eudyna Devices International s.r.l
Via Teglio 8/2-20158 Milano, Italy
TEL:+39-02-37052921
FAX: +39-02-37052920
Eudyna Devices Europe Ltd.
150 Edinburgh Avenue, Slough, Berkshire,
SL1 4SS, United Kingdom
TEL: +44 (0) 1753 849950
FAX: +44 (0) 1753 577128
CAUTION
Eudyna Devices Compound Semiconductor Products contain gallium
arsenide (GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when
discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1906B, 19/F, Tower 6, China Hong Kong City,
33 Canton Road,
Tsim Sha Tsui, Kowloon,
Hong Kong
TEL: （852）2377-0227
FAX: （852）2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, Showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL: +81-55-275-4411
FAX: +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4
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