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FLM3439-12F fiches techniques PDF

SUMITOMO - C-Band Internally Matched FET

Numéro de référence FLM3439-12F
Description C-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





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FLM3439-12F fiche technique
FLM3439-12F
FEATURES
• High Output Power: P1dB = 41.5dBm (Typ.)
• High Gain: G1dB = 11.5dB (Typ.)
• High PAE: ηadd = 40% (Typ.)
• Low IM3 = -46dBc@Po = 30.5dBm
• Broad Band: 3.4 ~ 3.9GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3439-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50.
15
-5
57.6
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
Gain Flatness
G
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 3400mA
VDS = 5V, IDS = 300mA
IGS = -300µA
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.4 ~ 3.9 GHz,
ZS=ZL= 50 ohm
Min.
-
-
-1.0
-5.0
40.5
10.5
-
-
-
Limit
Typ. Max.
5800 8700
2900 -
-2.0 -3.5
--
41.5 -
11.5 -
3250 3800
40 -
- ±0.6
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 3.9 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 30.5dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Rth Channel to Case
- 2.3 2.6
°C/W
Channel Temperature Rise
CASE STYLE: IK
Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1

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