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PDF ELM7179-4PS Data sheet ( Hoja de datos )
| Número de pieza | ELM7179-4PS | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
| Logotipo |  |
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ELM7179-4PS
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=36.0dBm (Typ.)
High Gain: G1dB=10.5dB (Typ.)
High PAE: hadd=35% (Typ.)
Broad Band: 7.1 to 7.9GHz
Internally matched
Plastic Package for SMT applications
DESCRIPTION
The ELM7179-4PS is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PT
27.3
Storage Temperature
TSTG
-40 to +125
Channel Temperature
TCH
175
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg.C)
Item
Symbol
Condition
DC Input Voltage
VDS
Forward Gate Current
IGF RG=100 ohm
Reverse Gate Current
IGR RG=100 ohm
Channel Temperature
TCH
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source
Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
Rth
DTch
Symbol
Condition
IDSS
gm
VP
VGSO
VDS=5V, VGS=0V
VDS=5V, IDS=1100mA
VDS=5V, IDS=85mA
IGS=85uA
P1dB
G1dB
Idsr
hadd
DG
IM3
Rth
DTch
VDS=10V
IDS(DC)=0.65IDSS(typ.)
f=7.1 to 7.9 GHz
f=7.9GHz
Df=10MHz, 2-tone Test
Pout=25.5dBm (S.C.L.)
Channel to Case
10V x Idsr x Rth
Min.
-
-
-0.5
-5.0
35.0
9.0
-
-
-
-40
-
-
Unit
V
V
W
deg.C
deg.C
Limit
<10
<+16
>-2.2
155
Unit
V
mA
mA
deg.C
Limit
Typ.
1700
1700
-1.5
-
36.0
10.5
1100
35
-
Max.
2600
-
-3.0
-
-
-
1300
-
1.2
-43 -
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
4.5 5.5 deg.C/W
- 71.5 deg.C
Edition 1.8a
Jul. 2010
1
1 page  
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
38 VDS=10V @7.1GHz
60
36 50
34 40
32 30
30 20
28 10
26
17
19 21 23 25 27
Input Power [dBm]
0
29
700mA
900mA
1100mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
38 VDS=10V @7.9GHz
60
36 50
34 40
32 30
30 20
28 10
26
17
19 21 23 25 27
Input Power [dBm]
0
29
700mA
900mA
1100mA
ELM7179-4PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @7.5GHz
38
60
36 50
34 40
32 30
30 20
28 10
26
17
19 21 23 25 27
Input Power [dBm]
0
29
700mA
900mA
1100mA
Edition 1.8a
Jul. 2010
5
5 Page 
Package Outline
4
5
6
7
ELM7179-4PS
C-Band Internally Matched FET
3
2
1
Co Planarity
Edition 1.8a
Jul. 2010
Pin Assignments
1 : NC
2 : Gate
3 : NC
4 : NC
5 : Drain
6 : NC
7 : Source
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ELM7179-4PS.PDF ] | |
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