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FLM3135-4F fiches techniques PDF

SUMITOMO - C-Band Internally Matched FET

Numéro de référence FLM3135-4F
Description C-Band Internally Matched FET
Fabricant SUMITOMO 
Logo SUMITOMO 





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FLM3135-4F fiche technique
FLM3135-4F
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB = 36.5dBm (Typ.)
High Gain: G1dB = 12.0dB (Typ.)
• High PAE: ηadd = 38% (Typ.)
Low IM3 = -45dBc@Po = 25.5dBm
Broad Band: 3.1 to 3.5GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package
DESCRIPTION
The FLM3135-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25deg.C
Storage Temperature
Tstg
Channel Temperature
Tch
SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs:
15
-5
25
-65 to +175
175
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forw ard and reverse gate currents should not exceed 16.0 and -2.2 mA respectively w ith
gate resistance of 100ohm.
Unit
V
V
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25deg.C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS=5V, VGS=0V
- 1950 2900 mA
Transconductance
gm VDS=5V, IDS=1100mA
- 1000 -
mS
Pinch-off Voltage
Vp VDS=5V, IDS=90mA
-1.0 -2.0 -3.5
V
Gate Source Breakdown Voltage
VGSO IGS=-90uA
-5.0 -
-
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
P1dB
G1dB
Idsr
hadd
DG
VDS=10V,
IDS=0.55 IDSS (Typ.),
f=3.1 to 3.5 GHz,
ZS=ZL=50ohm
35.5
11.0
-
-
-
36.5
12.0
1100
38
-
-
-
1300
-
+/-0.6
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 3.5 GHz, Df = 10 MHz
IM3 2-Tone Test
Pout = 25.5dBm S.C.L.
-42 -45
-
dBc
Thermal Resistance
Channel Temperature Rise
Rth
DTch
Channel to Case
- 5.0 6.0 deg.C/W
10V x Idsr x Rth
- - 80 deg.C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE
IB
ESD
Class 3A
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.2
Aug. 2012
1

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