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What is ELM5964-7PS?

This electronic component, produced by the manufacturer "SUMITOMO", performs the same function as "C-Band Internally Matched FET".


ELM5964-7PS Datasheet PDF - SUMITOMO

Part Number ELM5964-7PS
Description C-Band Internally Matched FET
Manufacturers SUMITOMO 
Logo SUMITOMO Logo 


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Total 16 Pages



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ELM5964-7PS
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=39.0dBm (Typ.)
High Gain: G1dB=11.0dB (Typ.)
High PAE: ηadd=36% (Typ.)
Broad Band: 5.9 to 6.4GHz
Internally matched
Plastic Package for SMT applications
DESCRIPTION
The ELM5964-7PS is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TSTG
TCH
15
-5
42.8
-40 to +125
175
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg.C)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF
IGR
TCH
RG=100 ohm
RG=100 ohm
<10
<+16
>-2.2
155
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gage-Source
Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
Rth
Tch
Symbol
Condition
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
ηadd
G
IM3
Rth
Tch
VDS=5V, VGS=0V
VDS=5V, IDS=2200mA
VDS=5V, IDS=170mA
IGS=170uA
VDS=10V
IDS(DC)=2200mA(typ.)
f=5.9 to 6.4 GHz
f=6.4GHz
f=10MHz, 2-tone Test
Pout=28.0dBm (S.C.L)
Channel to Case
10V x Idsr x Rth
Min.
-
-
-0.5
-5.0
38.0
9.5
-
-
-
-40
-
-
Limit
Typ.
3400
3400
-1.5
-
39.0
11.0
2200
36
-
-45
2.5
-
Max.
5200
-
-3.0
-
-
-
2600
-
1.2
-
3.0
80
Unit
V
V
W
deg.C
deg.C
Unit
V
mA
mA
deg.C
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
deg.C/W
deg.C
Edition 1.0
Nov. 2010
1

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ELM5964-7PS equivalent
ELM5964-7PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @5.9GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
18 20 22 24 26 28 30 32
Input Power [dBm]
1400 mA
1800 mA
2200 mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @6.15GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
18 20 22 24 26 28 30 32
Input Power [dBm]
1400 mA
1800 mA
2200 mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @6.4GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
18 20 22 24 26 28 30 32
Input Power [dBm]
1400 mA
1800 mA
2200 mA
Edition 1.0
Nov. 2010
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ELM5964-7PS electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
ELM5964-7PSThe function is C-Band Internally Matched FET. SUMITOMOSUMITOMO

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