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IRGBC20SD2 fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRGBC20SD2
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRGBC20SD2 fiche technique
PD-9.1544
IRGBC20SD2
PROVISIONAL
INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed CoPack
ULTRAFAST SOFT RECOVERY DIODE
C
Features
VCES = 600V
• Switching-loss rating includes all 'tail' losses
• HEXFREDTM soft ultrafast diodes
• Optimized for line frequency operation (to 400HZ)
Description
Co-packaged IGBTs are a natural extension of
International Rectifier's well-known IGBT line. They
provide the convenience of an IBGT and an ultrafast
recovery diode in one package, resulting in
substantial benefits to a host of high-voltage, high-
current, motor control, UPS and power supply
applications.
G
E
n -ch a n n e l
VCE(SAT) 2.4V
@VGE = 15V, IC = 10A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
19
10
76
38
7.0
32
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
3.5
------
80
------
Units
°C/W
g (oz)
Revision 0:9/04/96

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