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PDF IRGBC20S Data sheet ( Hoja de datos )
| Número de pieza | IRGBC20S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.687A
IRGBC20S
Standard Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation ( to 400 Hz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) ≤ 2.4V
@VGE = 15V, IC = 10A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
600
19
10
76
38
±20
5.0
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-3
Min.
—
—
—
—
Typ.
—
0.50
—
2.0 (0.07)
Max.
2.1
—
80
—
Units
°C/W
g (oz)
Revision 0
1 page  
IRGBC20S
700
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
600 Cres = C gc
Coes = C ce + C gc
500 Cies
400
Coes
300
200
Cres
100
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
4.2
VCC = 480V
VG E = 15V
TC = 25°C
IC = 10A
4.0
3.8
20
VCE = 480V
IC = 10A
16
12
8
4
0
0 4 8 12 16
Q g , Total G ate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
20
100
RG = 50 Ω
V GE = 15 V
V CC = 4 80 V
IC = 20A
10
IC = 10A
I C = 5.0A
3.6
20
30 40 50
R G , Gate R esistance (Ω )
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, C ase Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-7
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRGBC20S.PDF ] | |
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