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PDF IRGBC20M Data sheet ( Hoja de datos )
| Número de pieza | IRGBC20M | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 9.1127
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
IRGBC20M
Short Circuit Rated
Fast IGBT
VCES = 600V
VCE(sat) ≤ 2.5V
@VGE = 15V, IC = 8.0A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
13
8.0
26
26
10
±20
5.0
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
0.50
—
2 (0.07)
Max.
2.1
—
80
—
Units
°C/W
g (oz)
C-301
Revision 1
1 page  
IRGBC20M
600
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = Cce + C gc
Cies
400
Coes
200
Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 8.0A
16
12
8
4
0
0 4 8 12 16
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
20
0 .9 0 0
0 .8 9 6
VCC = 480V
VGE = 15V
TC = 25°C
IC = 8.0A
0 .8 9 2
0 .8 8 8
0 .8 8 4
0 .8 8 0
10
20 30 40 50
R G , Gate R esistance (Ω )
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
RG = 50 Ω
V GE = 15V
V CC = 480V
1
IC = 16A
IC = 8.0A
IC = 4.0A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, C ase Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-305
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRGBC20M.PDF ] | |
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