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PDF FSP8N60 Data sheet ( Hoja de datos )
| Número de pieza | FSP8N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | FASICARD | |
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FSP8N60/FS8N60
600V N-Channel MOSFET
Features
■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V
■ Gate charge (Typical 30nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
(Note 1)
(Note 2)
(Note 1)
(Note 3)
TSTG, TJ Operating Junction Temperature & Storage Temperature
TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
FSP8N60 FS8N60
600
7.5 7.5
4.5 4.5*
30 30
±30
285
15.5
4.5
155
1.21
55
0.4
-55 ~ 150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/ °C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ
Thermal Resistance, Junction-to-Ambient
FSP8N60 FS8N60
0.85 2.2
0.5 ___
62.5 62.5
Units
°C/W
°C/W
°C/W
1/9 REV:1.0
1 page  
FSP8N60/FS8N60
5/9 REV:1.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FSP8N60.PDF ] | |
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