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Numéro de référence | FJP13009H2TU | ||
Description | High-Voltage Fast-Switching NPN Power Transistor | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
July 2013
FJP13009
High-Voltage Fast-Switching NPN Power Transistor
Features
• High-Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switched Mode Power Supply
1 TO-220
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number(1)
FJP13009TU
FJP13009H2TU
Marking
J13009
J13009-2
Package
TO-220 3L
TO-220 3L
Packing Method
Rail
Rail
Note:
1. The Affix “-H2” means the hFE classification.
The Suffix “-TU” means the tube packing method.
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
ICP
IB
PD
TJ
TSTG
Note:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Device Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature Range
700
400
9
12
24
6
100
150
-65 to +150
V
V
V
A
A
A
W
°C
°C
2. These ratings are based on a maximum junction temperature of 150°C.
These are steady state limits. The factory should be consulted on application involving pulsed or low duty cycle
operations.
© 2003 Fairchild Semiconductor Corporation
Rev. 1.1.0
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ FJP13009H2TU ] |
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