(PDF) EB102 Datasheet

Número de pieza	EB102
Descripción	Transistor
Fabricantes	SYS Semiconductors
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No Preview Available ! Shenzhen SYS Semiconductors Co., LTD. EB SERIES TRANSISTORS FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Product Specification EB102 WIDE SOA Absolute Maximum Ratings Tc=25°C PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO 600 Collector-Emitter Voltage VCEO 400 Emitter- Base Voltage VEBO 9 Collector Current IC 0.4 Total Power Dissipation PC 8 Junction Temperature Tj 150 Storage Temperature Tstg -65-150 UNIT V V V A W °C °C TO-92 Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter- Base Voltage Tc=25°C SYMBOL ICBO ICEO VCEO VEBO Collector-Emitter Saturation Voltage Vcesat Base-Emitter Saturation Voltage Vbesat DC Current Gain hFE Storage Time Falling Time ts tf TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.1A,IB=10mA IC=0.4A,IB=0.1A IC=0.1A,IB=10mA VCE=5V,IC=1mA VCE=10V,IC=50mA Vce=5V,Ic=0.4A VCC=5V, IC=0.1A, (UI9600) MIN 400 9 7 10 5 1.0 MAX 100 250 0.5 0.7 1.0 40 3.0 0.9 UNIT A A V V V V µS SYS semiconductors 2005.12 1 1 page

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PDF EB102 Data sheet ( Hoja de datos )