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NTMFS4C13NT3G fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTMFS4C13NT3G
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTMFS4C13NT3G fiche technique
NTMFS4C13N
Power MOSFET
30 V, 38 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =80°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 21 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
30 V
±20 V
13.0 A
9.7
2.46 W
19.1 A
14.3
5.32 W
7.2 A
5.4
0.75 W
38 A
29
21.6 W
106
70
55 to
+150
19
7.0
22
A
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 15 Apk, EAS = 11 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.1 mW @ 10 V
13.8 mW @ 4.5 V
D (58)
ID MAX
38 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
MARKING
DIAGRAM
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
D
SD
S 4C13N
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C13NT1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4C13NT3G SO8 FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
November, 2013 Rev. 2
1
Publication Order Number:
NTMFS4C13N/D

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