NTMFS4C13N Datasheet PDF - ON Semiconductor
| Part Number | NTMFS4C13N | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
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NTMFS4C13N
Power MOSFET
30 V, 38 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =80°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 21 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
30 V
±20 V
13.0 A
9.7
2.46 W
19.1 A
14.3
5.32 W
7.2 A
5.4
0.75 W
38 A
29
21.6 W
106
70
−55 to
+150
19
7.0
22
A
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 15 Apk, EAS = 11 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.1 mW @ 10 V
13.8 mW @ 4.5 V
D (5−8)
ID MAX
38 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
SD
S 4C13N
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C13NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4C13NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 2
1
Publication Order Number:
NTMFS4C13N/D
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NTMFS4C13N
TYPICAL CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
tf
td(off)
tr
10 td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10 ms
10 100 ms
1 ms
1
0 V < VGS < 10 V
Single Pulse
0.1 TC = 25°C
RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.01 0.1
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
11
10 QT
9
8
7
6
5
4
Qgs
3
2
1
0
02
Qgd
46
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
8 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
15
TJ = 125°C
TJ = 25°C
10
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
12
ID = 15 A
10
8
6
4
2
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| Information | Total 7 Pages | |
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