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PDF NTMFS4985NF Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4985NF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4985NF
Power MOSFET
30 V, 65 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• Telecom Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuorrteen1t)RqJA
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±20
23.9
17.2
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
3.04
36
26
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuorrteen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
7.0
17.5
12.6
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuorrteen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
1.63
65
47
Power Dissipation
RqJC (Note 1)
TC = 25°C PD 22.73
Pulsed Drain
Current
tp=10ms TA = 25°C
IDM
195
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
TA = 25°C
IDmaxpkg
TJ,
TSTG
IS
dV/dt
100
−55 to
+150
64
6
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, IL = 33 Apk,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
54
260
Unit
V
V
A
W
A
W
A
W
A
W
A
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.4 mW @ 10 V
5.0 mW @ 4.5 V
ID MAX
65 A
N−CHANNEL MOSFET
D (5, 6)
G
(4)
S (1, 2, 3)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4985NF
S AYWZZ
GD
D
4895NF = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4985NFT1G
Package
SO−8FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4985NFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 2
1
Publication Order Number:
NTMFS4985NF/D
1 page  
NTMFS4985NF
TYPICAL PERFORMANCE CURVES
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGS = 0 V
Ciss TJ = 25°C
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
10 QT
8
6
4 Qgs Qgd
ID = 30 A
2 TJ = 25°C
VDD = 15 V
VGS = 10 V
0
0 4 8 12 16 20 24 28 32
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
VDD = 15 V
ID = 10 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1 10 100
1000
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
10 100 ms
1 ms
1 10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10.0
9.0 VGS = 0 V
8.0 TJ = 25°C
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
60
55 ID = 33 A
50
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMFS4985NF.PDF ] | |
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