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PDF NSM80100MT1G Data sheet ( Hoja de datos )
| Número de pieza | NSM80100MT1G | |
| Descripción | PNP Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NSM80100MT1G
PNP Transistor with Dual
Series Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD Control Board
• High Speed Switching
• High Voltage Switching
MAXIMUM RATINGS − PNP TRANSISTOR
Rating
Symbol
Collector −Emitter Voltage
VCEO
Collector −Base Voltage
VCBO
Emitter −Base Voltage
VEBO
Collector Current − Continuous
IC
MAXIMUM RATINGS − SWITCHING DIODE
Value
−80
−80
−4.0
−500
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Reverse Voltage
Forward Current
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t < 1 sec
t = 1 msec
Operating and Storage Junction
Temperature Range
Symbol
VR
IF
IFSM
TJ, Tstg
Value
100
200
1.0
20
−55 to +150
Unit
V
mA
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ESD RATINGS
Rating
Electrostatic Discharge
HBM
MM
Class
3A
M4
Value
4000 V ≤ Failure < 8000 V
Failure > 400 V
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance from
Junction−to−Ambient (Note 1)
Total Device Dissipation FR−5 Board
(Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−5 = 650 mm2 pad, 2.0 oz Cu.
2. FR−5 = 10 mm2 pad, 2.0 oz Cu.
Symbol
PD
RqJA
Max
400
313
Unit
mW
mW/°C
°C/W
PD
RqJA
270 mW
mW/°C
463 °C/W
TJ, Tstg −55 to +150
°C
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 3
1
http://onsemi.com
PNP Transistor with Dual Series
Switching Diode
65
D1
D2
4
Q1
123
654
1 23
SC−74
CASE 318F
MARKING DIAGRAM
3PN MG
G
3PN = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSM80100MT1G SC−74
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSM80100M/D
1 page  
NSM80100MT1G
TYPICAL CHARACTERISTICS
1000
100
100 TA = 150°C
TA = 125°C
10 TA = 85°C
TA = 55°C
1 TA = 25°C
TA = −40°C
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, FORWARD VOLTAGE (V)
Figure 12. Forward Voltage
10
1.0
0.1
0.01
0.001
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40 50 60 70
VR, REVERSE VOLTAGE (V)
Figure 13. Leakage Current
0.61 100
0.59
0.57 75
0.55
0.53 50
0.51
0.49 25
0.47
0.45
012345678
VR, REVERSE VOLTAGE (V)
Figure 14. Capacitance
0 0 25 50 75 100 125 150 175
TA, DERATED AMBIENT TEMPERATURE (°C)
Figure 15. Diode Power Dissipation Curve
http://onsemi.com
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| PDF Descargar | [ Datasheet NSM80100MT1G.PDF ] | |
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